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| inchange semiconductor isc product specification isc silicon pnp power transistor 2SB744 description high collector current -i c = -3a collector-emitter breakdown voltage- : v (br)ceo = -45v(min) complement to type 2sd794 applications designed for use in audio frequency amplifier. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -70 v v ceo collector-emitter voltage -45 v v ebo emitter-base voltage -5 v i c collector current-continuous -3 a i cp collector current-pulse -5 a collector power dissipation @ t c =25 10 p c collector power dissipation @ t a =25 1 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB744 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce(sat) collector-emitter saturation voltage i c = -1.5a; i b = -0.15a b -2.0 v v be(sat) base-emitter saturation voltage i c = -1.5a; i b = -0.15a b -2.0 v i cbo collector cutoff current v cb = -45v; i e = 0 -1.0 a i ebo emitter cutoff current v eb = -3v; i c = 0 -1.0 a h fe-1 dc current gain i c = -20ma; v ce = -5v 30 h fe-2 dc current gain i c = -0.5a; v ce = -5v 60 320 f t current-gain?bandwidth product i c = -0.1a; v ce = -5v 45 mhz c ob output capacitance i e =0; v cb = -10v, f test = 1mhz 60 pf ? h fe- 2 classifications r q p 60-120 100-200 160-320 isc website www.iscsemi.cn 2 |
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